Semiconductor Structures and Methods of Forming the Same

ABSTRACT

Semiconductor structures and methods for forming a semiconductor structure are provided. A first active semiconductor region is disposed in a first vertical level of the semiconductor structure. A second active semiconductor region is disposed in the first vertical level, where the second active semiconductor region is separated from the first active semiconductor region by a distance in a first direction. A first conductive structure is disposed in a second vertical level that is adjacent to the first vertical level. The first conductive structure extends along the first direction and electrically couples the first active semiconductor region to the second active semiconductor region.

BACKGROUND

Integrated circuits (ICs) are often designed with devices (e.g.,transistors, resistors, capacitors, etc.) connected by conductivetraces, such as metal lines and polysilicon lines, to form circuits. Thedevices in ICs are formed by a photolithographic process that includesuse of photoresists, photolithographic masks, specialized light sources,and various etchants.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A illustrates a top-down view of a semiconductor structure, inaccordance with some embodiments.

FIG. 1B illustrates a cross-sectional view of the semiconductorstructure of FIG. 1A, in accordance with some embodiments.

FIGS. 1C and 1D illustrate a signal path of the semiconductor structureof FIGS. 1A and 1B, in accordance with some embodiments.

FIGS. 1E, 1F, and 1G illustrate top-down views of semiconductorstructures, in accordance with some embodiments.

FIGS. 2A-2E illustrate examples in which a conductive structure is usedto provide electrical coupling between transistors, in accordance withsome embodiments.

FIGS. 3A and 3B illustrate conductive structures used in formingelectrical connections between standard cells, in accordance with someembodiments.

FIG. 4 is a flowchart depicting operations of an example method forforming a semiconductor structure, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure relates to semiconductor structures and methodsof forming semiconductor structures. In some embodiments describedherein, conductive structures (e.g., metal lines, etc.) are utilized toform electrical connections between active semiconductor regions of asemiconductor structure. For instance, in some embodiments, a conductivestructure is used to form an electrical connection between a firstactive semiconductor region formed in a substrate (e.g., a source ordrain region of a first transistor) and a second active semiconductorregion formed in the substrate (e.g., a source or drain region of asecond transistor). In such embodiments, the conductive structure isformed directly over (e.g., in direct contact with) the first and secondactive semiconductor regions, thus enabling these active regions to beelectrically connected with a minimal amount of vertical routing.

As described in further detail below, the techniques of the presentdisclosure are in contrast to other techniques that require a greaterdegree of vertical routing to achieve the same electrical connections.The techniques of the present disclosure thus utilize a lower amount ofrouting space and a lower amount of routing material (e.g., metalmaterial, etc.) as compared to the other techniques. These advantagesand others of the present disclosure are described in detail below.

FIG. 1A illustrates a top-down view of a semiconductor structure, andFIG. 1B illustrates a cross-sectional view of the semiconductorstructure along a cut-line A-A′ shown in FIG. 1A. The semiconductorstructure includes a first active semiconductor region 102 disposed in afirst vertical level 104. In some embodiments, the first activesemiconductor region 102, which may also be referred to as an oxidedefinition (OD) region or an active device region, comprises a sourceregion or a drain region of a transistor (e.g., a source or draindiffusion region). The first active semiconductor region 102 is formedin a substrate 124 (e.g., a silicon substrate, another semiconductorsubstrate, etc.), in some embodiments. Further, in some embodiments, thefirst active semiconductor region 102 comprises a doped semiconductorregion, such as a portion of the substrate 124 that has been dopedp-type or n-type.

The semiconductor structure of FIGS. 1A and 1B further includes a secondactive semiconductor region 120 disposed in the first vertical level104. The second active semiconductor region 120 is separated from thefirst active semiconductor region 102 by a distance 109 in they-direction. Like the first active semiconductor region 102, the secondactive semiconductor region 120 comprises a source region or a drainregion of a transistor, in some embodiments. Specifically, in someembodiments, the first active semiconductor region 102 comprises asource or drain region of a first transistor, and the second activesemiconductor region 120 comprises a source or drain region of a secondtransistor. In some embodiments, the second active semiconductor region120 comprises a doped semiconductor region, such as a portion of thesubstrate 124 that has been doped p-type or n-type.

In the example of FIGS. 1A and 1B, the first and second activesemiconductor regions 102, 120 are not in contact (e.g., direct contact)with each other. Thus, to enable the first and second activesemiconductor regions 102, 120 to communicate (e.g., to pass a signal,voltage, or current between the regions 102, 120, etc.), an electricalconnection is made between these regions 102, 120. In some embodiments,a first conductive structure 108 is utilized to form this electricalconnection. As shown in FIGS. 1A and 1B, the first conductive structure108 extends in the y-direction between the first and second activesemiconductor regions 102, 120, thus forming an electrical connectionbetween these regions 102, 120.

In some embodiments, the first and second active semiconductor regions102, 120 are formed as part of a front-end-of-line (FEOL) process, andthe first conductive structure 108 is a metal line formed as part of amiddle-end-of-line (MEOL) process. Semiconductor fabrication processesare often considered to include a FEOL portion, a MEOL portion, and aback-end-of-line (BEOL) portion. FEOL is the first portion of asemiconductor fabrication process (e.g., an IC fabrication process)whereby individual active devices are patterned on a semiconductorwafer, for example. FEOL processes include, in embodiments, selectingthe type of semiconductor wafer to be used, chemical-mechanicalplanarization and cleaning of the wafer, shallow trench isolation (STI),well formation, gate module formation, and source and drain creation,among others. FEOL processes do not include the deposition of metalinterconnect layers, in embodiments. MEOL processes occur after FEOLprocesses and include gate contact formation and under bumpmetallization (UBM) processes, among others, in embodiments. BEOL is thefinal portion of the semiconductor fabrication process, wherebyindividual devices (e.g., transistors, capacitors, resistors, etc.) areinterconnected with vias and conductive traces, for example.

In some embodiments, the first conductive structure 108 is formed in ametal layer that is disposed directly above the active semiconductorregions 102, 120 (e.g., directly above OD regions, directly above activedevice regions, etc.). The metal layer disposed directly above theactive semiconductor regions 102, 120 is sometimes referred to as ametal “MD” layer. In embodiments, the metal MD layer is a layer formedas part of an MEOL process.

The first conductive structure 108 is formed in a second vertical level110 that is adjacent to the first vertical level 104 in which the firstand second active semiconductor regions 102, 120 are formed. The firstconductive structure 108 is formed above the active semiconductorregions 102, 120 in the embodiment of FIG. 1B. In other embodiments,however, the first conductive structure 108 is formed in a verticallevel that is adjacent to the first vertical level 104 and below thefirst vertical level 104. In some embodiments, the first conductivestructure 108 is in contact (e.g., direct contact) with the first activesemiconductor region 102 and the second active semiconductor region 120.

The semiconductor structure of FIGS. 1A and 1B further includes a firstvia 112 in contact with a portion of the first conductive structure 108that is disposed above the first active semiconductor region 102. Asshown in FIG. 1B, the first via 112 is disposed in a third verticallevel 114 that is above the second vertical level 110. A secondconductive structure 116 is in contact with the first via 112 anddisposed in a fourth vertical level 118 that is above the third verticallevel 114. A second via 121 is in contact with a portion of the firstconductive structure 108 that is disposed above the second activesemiconductor region 120. As shown in FIG. 1B, the second via 121 isdisposed in the third vertical level 114. A third conductive structure122 is in contact with the second via 121 and disposed in the fourthvertical level 118.

In the embodiment of FIGS. 1A and 1B, the second and third conductivestructures 116, 118 extend in the x-direction. The direction in whichthe second and third conductive structures 116, 118 extend isperpendicular to the direction in which the first conductive structure108 extends. Thus, in the embodiment of FIGS. 1A-1E, the firstconductive structure 108 extends in the y-direction, and the second andthird conductive structures 116, 122 extend in the x-direction. In otherembodiments, the first conductive structure 108 extends in thex-direction, and the second and third conductive structures 116, 122extend in the y-direction.

In some embodiments, the second and third conductive structures 116, 122are formed as part of a MEOL or BEOL process. In some embodiments, thesecond and third conductive structures 116, 122 are formed within ametal 0 (M0) layer that is disposed above the first and second vias 112,121. As noted above, in some embodiments, the first conductive structure108 is formed within the metal “MD” layer that is disposed above theactive semiconductor regions 102, 120. In some embodiments, each of theMD and M0 layers can include metal lines extending in one direction.Further, under these embodiments, the direction of metal lines formed inthe MD layer is perpendicular to the direction of metal lines formed inthe M0 layer. Thus, in the embodiment of FIGS. 1A and 1B, the firstconductive structure 108 formed within the MD layer extends in they-direction, and the second and third conductive structures 116, 122formed within the M0 layer extend in the x-direction, as describedabove.

In some embodiments, the second and third conductive structures 116, 122comprise metal contacts for providing a signal (e.g., a voltage signal,a current signal, another type of signal, etc.) to the semiconductorstructure and receiving a signal from the semiconductor structure. Toillustrate this use of the second and third conductive structures 116,122, reference is made to FIGS. 1C and 1D. These figures depict a signalbeing input to the semiconductor structure via the third conductivestructure 122. The signal propagates through the second via 121, thefirst conductive structure 108, and the first via 112, as shown in thefigure. The signal is received at the second conductive structure 116.In some embodiments, because the first conductive structure 108 iselectrically coupled to the first and second active semiconductorregions 102, 120 (as described above), the signal also propagates tothese regions 102, 120 of the semiconductor structure.

The use of the first conductive structure 108 to provide an electricalconnection between the first and second active semiconductor regions102, 120 differs from other techniques. In the other techniques, astructure having a larger amount of vertical routing is utilized toprovide an electrical connection between the regions 102, 120.Specifically, in the other techniques, a metal line formed in a layer(e.g., the MD layer) directly above the regions 102, 120 does not extendfrom the first active semiconductor region 102 to the second activesemiconductor region 120, and thus does not provide electrical couplingbetween these regions 102, 120. In some of the other techniques, a metalline formed in the layer directly above the regions 102, 120 is “cut.”Thus, a first portion of the metal line is in contact with the firstactive semiconductor region 102, and a second portion of the metal lineis in contact with the second active semiconductor region 120, but dueto the cutting, these portions of the metal line are not in directelectrical connection and thus do not provide an electrical connectionbetween the regions 102, 120. Accordingly, in the other techniques, toprovide an electrical connection between the first and second activesemiconductor regions 102, 120, vertical routing is utilized.

In some embodiments of the other techniques, a metal line formed in ametal 1 (M1) metal layer extends between the regions 102, 120. The M1metal layer is formed above the aforementioned M0 metal layer, relativeto the substrate. The M1 metal layer is not adjacent to the verticallevel 104 including the regions 102, 120 and is instead separated fromthe vertical level 104 by several layers (e.g., the M1 metal layer isseparated from the vertical level 104 by the MD and M0 metal layersdescribed above, in some embodiments). Thus, to enable the metal lineformed in the M1 layer to electrically couple the regions 102, 120together, a vertical routing structure is utilized to connect theregions 102, 120 to the metal line formed in the M1 layer. The verticalrouting structure includes, in some embodiments, multiple vias and/ormultiple conductive structures. These techniques can utilize arelatively large amount of routing material (e.g., metal material, etc.)and a relatively large amount of routing space. The relatively largeamount of routing material can result in unwanted capacitances.

In contrast to the other techniques described above, embodiments of thepresent disclosure utilize the conductive structure 108 that is not cut,thus enabling the conductive structure 108 to extend between the regions102, 120 and provide an electrical connection between these regions 102,120. In embodiments of the present disclosure, the conductive structure108 is formed directly over (e.g., in direct contact with) the activesemiconductor regions 102, 120, thus enabling these regions 102, 120 tobe electrically connected with a minimal amount of vertical routing.Embodiments of the present disclosure thus utilize a lower amount ofrouting space and a lower amount of routing material as compared to theother techniques. Other advantages provided by embodiments of thepresent disclosure are explained below.

As noted above, in some embodiments of the present disclosure, the firstconductive structure 108 is formed within a metal “MD” layer that isdisposed directly above the active semiconductor regions 102, 120. TheMD layer is formed as part of an MEOL process, in some embodiments, andis not formed as part of a BEOL process. By contrast, in the othertechniques described above, electrical coupling between the regions 102,120 is accomplished using a metal line in the M1 layer, which is formedas part of a BEOL process. It is thus noted that embodiments of thepresent disclosure differ from these other embodiments, because theembodiments of the present disclosure achieve electrical couplingbetween the regions 102, 120 (i) without the use of the M1 metal layer,and (ii) without the use of a BEOL process.

Although the embodiment of FIGS. 1A-1D includes the active semiconductorregions 102, 120 disposed within the substrate 124 (e.g., disposedwithin a silicon substrate), in other embodiments of the presentdisclosure, the regions 102, 120 are formed in a semiconductor layerthat is above the substrate 124. Further, it is noted that thetechniques of the present disclosure are not limited to the particularstructures shown in FIGS. 1A-1D and that the techniques described hereincan be utilized in a wide variety of other structures. Examples of suchother structures are shown in FIGS. 1E-1G.

The embodiment of FIG. 1E is similar to the embodiment of FIGS. 1A-1Dbut does not include the second via 121. Likewise, the embodiment ofFIG. 1F is similar to the embodiment of FIGS. 1A-1D but does not includethe first via 112. The embodiments of FIGS. 1E and 1F reflect the factthat in some instances, the first via 112 or the second via 121 may beeliminated to further reduce an amount of routing material. It is notedthat the removal of the first via 112 or the second via 121 does notaffect the electrical connection between the regions 102, 120 becausethese regions 102, 120 are electrically connected via the firstconductive structure 108. In the embodiment of FIG. 1G, the firstconductive structure 108 is longer than it is in the embodiments ofFIGS. 1A-1F. Further, in the embodiment of FIG. 1G, a via 150 andconductive structure 152 not included in the embodiments of FIGS. 1A-1Fare utilized. The via 150 is disposed in the third vertical level 114,and the conductive structure 152 is disposed in the fourth verticallevel 118. The embodiment of FIG. 1G provides a contact (e.g., formedvia the via 150 and conductive structure 152) that is not disposeddirectly above either of the regions 102, 120. Additionally, it can beseen that the embodiment of FIG. 1G includes neither the first via 112nor the second via 121 of FIGS. 1A-1D.

In some embodiments, the techniques of the present disclosure are usedto provide electrical coupling between transistors. To illustrate suchembodiments, reference is made to FIG. 2A. This figure depicts a firstactive semiconductor region 208 and a second active semiconductor region212 formed in a layer 204. In embodiments, the first activesemiconductor region 208 is similar to or the same as the first activesemiconductor region 102 of FIGS. 1A-1G, and the second activesemiconductor region 212 is similar to or the same as the second activesemiconductor region 120 of FIGS. 1A-1G. In embodiments, the layer 204comprises a substrate or a portion thereof. In the embodiment of FIG.2A, the first and second active semiconductor regions 208, 212 areparallel active semiconductor regions that extend in the x-direction, asshown in the figure.

As shown in FIG. 2B, multiple gates 206A, 206B, 206C are formed over thelayer 204, thus covering portions of the first and second activesemiconductor regions 208, 212. In some embodiments, each of the gates206A, 206B, 206C comprises a gate dielectric (e.g., a gate dielectriccomprising an insulating material, such as a high-K material, etc.) anda polysilicon or metal structure formed over the gate dielectric. Insome embodiments, a first source region and a first drain region of afirst transistor are disposed in the first active semiconductor region208 on opposite sides of the gate 206B. A channel region of the firsttransistor is disposed in the first active semiconductor region 208under the gate 206B. Similarly, in some embodiments, a second sourceregion and a second drain region of a second transistor are disposed inthe second active semiconductor region 212 on opposite sides of the gate206B. A channel region of the second transistor is disposed in thesecond active semiconductor region 212 under the gate 206B.

In the example of FIGS. 2A and 2B, the first and second activesemiconductor regions 208, 212 are separated from each other by adistance 213 in the y-direction. In some embodiments, to electricallycouple the first active semiconductor region 208 to the second activesemiconductor region 212, the conductive structure 216 illustrated inFIG. 2C is utilized. The conductive structure 216 is the same as orsimilar to the conductive structure 108 described above with referenceto FIGS. 1A-1G. Thus, in some embodiments, the conductive structure 216extends in the y-direction and is formed directly over (e.g., in directcontact with) the active semiconductor regions 208, 212. The conductivestructure 216 is disposed in a vertical level that is adjacent to avertical level in which the active semiconductor regions 208, 212 aredisposed, thus providing an electrical connection between the regions208, 212 with a minimal amount of vertical routing.

By electrically coupling the first active semiconductor region 208 tothe second active semiconductor region 212, in some embodiments, theconductive structure 216 electrically couples the drain or source regionof the first transistor to the drain or source region of the secondtransistor. Specifically, as noted above, first drain and first sourceregions of the first transistor are formed in the first activesemiconductor region 208 on opposite sides of the gate 206B, and seconddrain and second source regions of the second transistor are formed inthe second active semiconductor region 212 on opposite sides of the gate206B. Accordingly, by forming the conductive structure 216 as shown inFIG. 2C, the conductive structure 216 provides electrical couplingbetween the source or drain region of the first transistor and thesource or drain region of the second transistor, in some embodiments.

In some embodiments, the structures of FIGS. 2A-2C form a cell 202(e.g., a standard cell), as shown in FIG. 2C. Thus, in FIG. 2C, theconductive structure 216 provides an intra-cell connection in providingthe electrical connection between the first and second activesemiconductor regions 208, 212. FIGS. 2D and 2E illustrate the use ofother conductive structures for forming intra-cell connections. FIG. 2Ddepicts a cell 220 including active semiconductor regions 226, 230, 234,238 formed in a layer 244. In embodiments, the active semiconductorregions 226, 230, 234, 238 are similar to or the same the activesemiconductor regions 102, 120 of FIGS. 1A-1G. In embodiments, the layer244 comprises a substrate or a portion thereof. Gates 222A, 222B, 222C,224A, 224B, 224C are formed over the layer 244 as shown in the figure. Aconductive structure 242 similar to the conductive structure 108described above with reference to FIGS. 1A-1G forms an electricalconnection between the active semiconductor regions 230, 234, 238. Thecell 220 of FIG. 2D may be referred to as a “double-height” cell, incontrast to the “single-height” cell 202 depicted in FIG. 2C.

FIG. 2E depicts a cell 250 including active semiconductor regions 256,260, 264, 268, 272, 276 formed in a layer 282. In embodiments, theactive semiconductor regions 256, 260, 264, 268, 272, 276 are similar toor the same the active semiconductor regions 102, 120 of FIGS. 1A-1G.Gates 250A, 250B, 250C, 252A, 252B, 252C, 254A, 254B, 254C are formedover the layer 282 as shown in the figure. A conductive structure 280similar to the conductive structure 108 described above with referenceto FIGS. 1A-1G forms an electrical connection between the activesemiconductor regions 260, 264, 268, 272. The cell 250 of FIG. 2E may bereferred to as a “triple-height” cell. Although single-height,double-height, and triple-height cells are illustrated in the figuresand described herein, it is noted that the conductive structures of thepresent disclosure (e.g., conductive structures similar to theconductive structure 108 of FIGS. 1A-1G, etc.) can be used to formelectrical connections in cells of various other heights (e.g.,quadruple-height cells, etc.).

In the embodiments of FIGS. 2C-2E, a conductive structure electricallyconnects active semiconductor regions of a single cell and thus providesan intra-cell connection, as noted above. By contrast, in theembodiments of FIGS. 3A and 3B, similar conductive structures are usedto electrically connect active semiconductor regions of multipledifferent cells and thus provide inter-cell connections. FIG. 3A depictscells 300, 302, each of which is the same as or similar to the cell ofFIG. 2B. A conductive structure 304 forms an electrical connectionbetween active semiconductor regions of the respective cells 300, 302.The conductive structure 304 is the same as or similar to the conductivestructure 108 described above with reference to FIGS. 1A-1G.

FIG. 3B depicts cells 320, 324, 326, each of which is the same as orsimilar to the cell of FIG. 2B. A conductive structure 328 forms anelectrical connection between active semiconductor regions of therespective cells 320, 326. A conductive structure 330 is electricallycoupled to an active semiconductor region of the cell 324. Theconductive structures 328, 330 are the same as or similar to theconductive structure 108 described above with reference to FIGS. 1A-1G.In some embodiments, the conductive structures 328, 330 are formedwithin a metal “MD” layer that is disposed in the second vertical level110 depicted in FIG. 1B. Further, in the embodiment of FIG. 3B, aconductive structure 332 is formed within a M0 layer that is disposed inthe fourth vertical level 118 depicted in FIG. 1B. Vias 334, 336 formedin the third vertical level 114 depicted in FIG. 1B electrically connectthe conductive structure 332 to the conductive structures 328, 330,respectively. With these connections, an active semiconductor region ofthe cell 324 is electrically coupled to active semiconductor regions ofthe respective cells 320, 326, as shown in the figure.

As noted above, under certain process technologies, each of the MD andM0 layers can include metal lines extending in one direction. Further,under certain process technologies, the direction of metal lines formedin the MD layer is perpendicular to the direction of metal lines formedin the M0 layer. Thus, in the embodiment of FIG. 3B, both the conductivestructure 332 extending in the x-direction (e.g., the M0 metal line) andthe conductive structures 328, 330 extending in the y-direction (e.g.,the MD metal lines) are used in electrically coupling the cell 324 tothe other cells 320, 326.

FIG. 4 is a flowchart depicting operations of an example method forforming a semiconductor structure, in accordance with some embodiments.FIG. 4 is described with reference to FIGS. 1A and 1B above for ease ofunderstanding. But the process of FIG. 4 is applicable to otherstructures as well. At 402, a first active semiconductor region (e.g.,active semiconductor region 102) is formed in a first vertical level(e.g., vertical level 104) of a semiconductor structure. At 404, asecond active semiconductor region (e.g., active semiconductor region120) is formed in the first vertical level. The second activesemiconductor region is separated from the first active semiconductorregion by a distance in a first direction (e.g., a distance 109 in they-direction in FIGS. 1A and 1B). At 406, a first conductive structure(e.g., conductive structure 108) is formed in a second vertical level(e.g., vertical level 110) that is adjacent to the first vertical level.The first conductive structure extends along the first direction and isin contact with the first active semiconductor region and the secondactive semiconductor region. It is noted that in embodiments, some ofthe operations 402-406 of FIG. 4 are performed simultaneously and notnecessarily sequentially, and that in embodiments, the ordering of theoperations 402-406 varies from that depicted in the figure.

The present disclosure in various embodiments is directed tosemiconductor structures and methods for forming a semiconductorstructure. An example semiconductor structure includes a first activesemiconductor region disposed in a first vertical level of thesemiconductor structure. The semiconductor structure also includes asecond active semiconductor region disposed in the first vertical level,where the second active semiconductor region is separated from the firstactive semiconductor region by a distance in a first direction. Thesemiconductor structure further includes a first conductive structuredisposed in a second vertical level that is adjacent to the firstvertical level. The first conductive structure extends along the firstdirection and electrically couples the first active semiconductor regionto the second active semiconductor region.

In an example method of forming a semiconductor structure, a firstactive semiconductor region is formed in a first vertical level of asemiconductor structure. A second active semiconductor region is formedin the first vertical level. The second active semiconductor region isseparated from the first active semiconductor region by a distance in afirst direction. A first conductive structure is formed in a secondvertical level that is adjacent to the first vertical level. The firstconductive structure extends along the first direction and is in contactwith the first active semiconductor region and the second activesemiconductor region.

An example semiconductor structure includes a first active semiconductorregion disposed in a substrate. The semiconductor also includes a secondactive semiconductor region disposed in the substrate, where the secondactive semiconductor region is separated from the first activesemiconductor region by a distance in a direction. The semiconductorstructure also includes a conductive structure extending along thedirection and electrically coupling the first active semiconductorregion to the second active semiconductor region. The conductivestructure is in contact with the first active semiconductor region andthe second active semiconductor region.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

1. A semiconductor structure comprising: a first active semiconductorregion disposed in a first vertical level of the semiconductorstructure; a second active semiconductor region disposed in the firstvertical level, the second active semiconductor region being separatedfrom the first active semiconductor region by a distance in a firstdirection; and a first conductive structure disposed in a secondvertical level that is adjacent to the first vertical level, the firstconductive structure extending along the first direction andelectrically coupling the first active semiconductor region to thesecond active semiconductor region.
 2. The semiconductor structure ofclaim 1, wherein the first conductive structure is in contact with thefirst active semiconductor region and the second active semiconductorregion.
 3. The semiconductor structure of claim 1, wherein the secondvertical level is above the first vertical level.
 4. The semiconductorstructure of claim 1, wherein the first and second active semiconductorregions are parallel active semiconductor regions that extend in asecond direction that is perpendicular to the first direction.
 5. Thesemiconductor structure of claim 1, further comprising: a first via incontact with a first portion of the first conductive structure that isdisposed above the first active semiconductor region, the first viabeing disposed in a third vertical level that is above the secondvertical level; and a second conductive structure in contact with thefirst via, the second conductive structure being disposed in a fourthvertical level that is above the third vertical level.
 6. Thesemiconductor structure of claim 5, further comprising: a second via incontact with a second portion of the first conductive structure that isdisposed above the second active semiconductor region, the second viabeing disposed in the third vertical level; and a third conductivestructure in contact with the second via, the third conductive structurebeing disposed in the fourth vertical level.
 7. The semiconductorstructure of claim 1, wherein the first and second active semiconductorregions are disposed in a substrate, the semiconductor structure furthercomprising: a gate formed over the substrate; a first source region anda first drain region of a first transistor formed in the first activesemiconductor region on opposite sides of the gate; and a second sourceregion and a second drain region of a second transistor formed in thesecond active semiconductor region on opposite sides of the gate,wherein the first conductive structure electrically couples the firstsource region or the first drain region of the first transistor to thesecond source region or the second drain region of the secondtransistor.
 8. The semiconductor structure of claim 1, wherein the firstconductive structure has a length that is greater than or equal to thedistance.
 9. The semiconductor structure of claim 1, wherein the firstconductive structure comprises a metal line. 10-17. (canceled)
 18. Asemiconductor structure comprising: a first active semiconductor regiondisposed in a substrate; a second active semiconductor region disposedin the substrate, the second active semiconductor region being separatedfrom the first active semiconductor region by a distance in a firstdirection; and a conductive structure extending along the firstdirection and electrically coupling the first active semiconductorregion to the second active semiconductor region, the conductivestructure being in contact with the first active semiconductor regionand the second active semiconductor region.
 19. The semiconductorstructure of claim 18, wherein the first and second active semiconductorregions are parallel active semiconductor regions that extend in asecond direction that is perpendicular to the first direction.
 20. Thesemiconductor structure of claim 18, further comprising: a gate formedover the substrate; a first source region and a first drain region of afirst transistor formed in the first active semiconductor region onopposite sides of the gate; and a second source region and a seconddrain region of a second transistor formed in the second activesemiconductor region on opposite sides of the gate, wherein the firstconductive structure electrically couples the first source region or thefirst drain region of the first transistor to the second source regionor the second drain region of the second transistor.
 21. A semiconductorstructure comprising: a first active semiconductor region disposed in afirst vertical level of a semiconductor structure; a second activesemiconductor region disposed in the first vertical level, the secondactive semiconductor region being separated from the first activesemiconductor region by a distance in a first direction; and a firstconductive structure disposed in a second vertical level that isadjacent to the first vertical level, the first conductive structureextending along the first direction and being in contact with the firstactive semiconductor region and the second active semiconductor region.22. The semiconductor structure of claim 21, wherein the firstconductive structure electrically couples the first active semiconductorregion to the second active semiconductor region.
 23. The semiconductorstructure of claim 21, wherein the second vertical level is above thefirst vertical level relative to a substrate.
 24. The semiconductorstructure of claim 21, further comprising: a first via in contact with afirst portion of the first conductive structure that is disposed abovethe first active semiconductor region, the first via being disposed in athird vertical level that is above the second vertical level; and asecond conductive structure in contact with the first via, the secondconductive structure being disposed in a fourth vertical level that isabove the third vertical level.
 25. The semiconductor structure of claim24, further comprising: a second via in contact with a second portion ofthe first conductive structure that is disposed above the second activesemiconductor region, the second via being disposed in the thirdvertical level; and a third conductive structure in contact with thesecond via, the third conductive structure being disposed in the fourthvertical level.
 26. The semiconductor structure of claim 21, wherein thefirst and second active semiconductor regions are disposed in asubstrate, the semiconductor structure further comprising: a gatedisposed over the substrate; a first source region and a first drainregion of a first transistor disposed in the first active semiconductorregion on opposite sides of the gate; and a second source region and asecond drain region of a second transistor disposed in the second activesemiconductor region on opposite sides of the gate, wherein the firstconductive structure electrically couples the first source region or thefirst drain region of the first transistor to the second source regionor the second drain region of the second transistor.
 27. Thesemiconductor structure of claim 21, wherein the first and second activesemiconductor regions are parallel active semiconductor regions thatextend in a second direction that is perpendicular to the firstdirection.
 28. The semiconductor structure of claim 21, wherein thefirst conductive structure comprises a metal line.